2SD533 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD533

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 270 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 45

Encapsulados: TO3

 Búsqueda de reemplazo de 2SD533

- Selecciónⓘ de transistores por parámetros

 

2SD533 datasheet

 ..1. Size:197K  inchange semiconductor
 2sd533.pdf pdf_icon

2SD533

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD533 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching-control amplifiers, power gates,switching regulators, conv

 9.1. Size:199K  inchange semiconductor
 2sd535.pdf pdf_icon

2SD533

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD535 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current, high power application

 9.2. Size:196K  inchange semiconductor
 2sd534.pdf pdf_icon

2SD533

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD534 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters,converters,and other general high-cur

 9.3. Size:195K  inchange semiconductor
 2sd536.pdf pdf_icon

2SD533

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD536 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Excellent Safe Operating Area High Current Capability Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters. General

MOSTRAR MÁS

Otros transistores... 2SD528H, 2SD529, 2SD52A, 2SD53, 2SD530, 2SD531, 2SD531-1, 2SD532, 13005, 2SD534, 2SD535, 2SD536, 2SD537, 2SD538, 2SD538A, 2SD539, 2SD539A