Биполярный транзистор 2SD533 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD533
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 270 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 45
Корпус транзистора: TO3
2SD533 Datasheet (PDF)
2sd533.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD533DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, conv
2sd535.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD535DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high power application
2sd534.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD534DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,andother general high-cur
2sd536.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD536DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converters.General
2sd531.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD531DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.) @ I = 4.0ACE(sat) CWith TO-220C PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power ampli
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050