2SD537 Todos los transistores

 

2SD537 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD537
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 13 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO3
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2SD537 Datasheet (PDF)

 9.1. Size:199K  inchange semiconductor
 2sd535.pdf pdf_icon

2SD537

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD535DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high power application

 9.2. Size:196K  inchange semiconductor
 2sd534.pdf pdf_icon

2SD537

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD534DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,andother general high-cur

 9.3. Size:195K  inchange semiconductor
 2sd536.pdf pdf_icon

2SD537

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD536DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converters.General

 9.4. Size:201K  inchange semiconductor
 2sd531.pdf pdf_icon

2SD537

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD531DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.) @ I = 4.0ACE(sat) CWith TO-220C PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power ampli

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: RT3YB7M | 2SA795A | 2SA1706T-AN | 3DG2413K | BC848CW-G | 2SA815

 

 
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