2SD551 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD551DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier applications.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE

isc Silicon NPN Power Transistor 2SD557DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SD553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4ACE(sat) CComplement to Type 2SB553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applicati

isc Silicon NPN Power Transistor 2SD552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB552Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD554DESCRIPTIONContunuous Collector Current-I = 2ACPower Dissipation-P =30W @T = 25D CCollector-Emitter Saturation Voltage-: V )= 2.0 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifi

isc Silicon NPN Power Transistor 2SD555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOWide Area of Safe OperationHigh PowerHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD550DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.8V(Max)@I = 5ACE(sat) CWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching ap