Справочник транзисторов. 2SD551

 

Биполярный транзистор 2SD551 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD551
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 154 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 8 MHz
   Ёмкость коллекторного перехода (Cc): 250 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO3

 Аналоги (замена) для 2SD551

 

 

2SD551 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
2sd551.pdf

2SD551
2SD551

isc Silicon NPN Power Transistor 2SD551DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier applications.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE

 9.1. Size:229K  toshiba
2sd553.pdf

2SD551
2SD551

 9.2. Size:202K  inchange semiconductor
2sd557.pdf

2SD551
2SD551

isc Silicon NPN Power Transistor 2SD557DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 9.3. Size:213K  inchange semiconductor
2sd553.pdf

2SD551
2SD551

isc Silicon NPN Power Transistor 2SD553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4ACE(sat) CComplement to Type 2SB553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applicati

 9.4. Size:208K  inchange semiconductor
2sd552.pdf

2SD551
2SD551

isc Silicon NPN Power Transistor 2SD552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB552Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATING

 9.5. Size:182K  inchange semiconductor
2sd554.pdf

2SD551
2SD551

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD554DESCRIPTIONContunuous Collector Current-I = 2ACPower Dissipation-P =30W @T = 25D CCollector-Emitter Saturation Voltage-: V )= 2.0 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifi

 9.6. Size:207K  inchange semiconductor
2sd555.pdf

2SD551
2SD551

isc Silicon NPN Power Transistor 2SD555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.7. Size:180K  inchange semiconductor
2sd556.pdf

2SD551
2SD551

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOWide Area of Safe OperationHigh PowerHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(

 9.8. Size:202K  inchange semiconductor
2sd550.pdf

2SD551
2SD551

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD550DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.8V(Max)@I = 5ACE(sat) CWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching ap

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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