2SD569O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD569O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO220
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2SD569O datasheet
2sd569.pdf
isc Silicon NPN Power Transistor 2SD569 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB708 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RA
2sd560.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is Ordering Name Package ideal for direct driving from the IC output of devices such
2sd568.pdf
isc Silicon NPN Power Transistor 2SD568 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM R
Otros transistores... 2SD560R, 2SD560Y, 2SD565, 2SD568, 2SD568O, 2SD568R, 2SD568Y, 2SD569, TIP122, 2SD569R, 2SD569Y, 2SD57, 2SD570, 2SD571, 2SD572, 2SD573, 2SD574
History: 2SA265
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