2SD569O Specs and Replacement
Type Designator: 2SD569O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO220
2SD569O Substitution
- BJT ⓘ Cross-Reference Search
2SD569O datasheet
isc Silicon NPN Power Transistor 2SD569 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB708 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RA... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is Ordering Name Package ideal for direct driving from the IC output of devices such... See More ⇒
isc Silicon NPN Power Transistor 2SD568 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM R... See More ⇒
Detailed specifications: 2SD560R, 2SD560Y, 2SD565, 2SD568, 2SD568O, 2SD568R, 2SD568Y, 2SD569, TIP122, 2SD569R, 2SD569Y, 2SD57, 2SD570, 2SD571, 2SD572, 2SD573, 2SD574
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History: BC859BLT1G | BC859BMTF
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