2SD570 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD570
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220
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2SD570 datasheet
2sd570.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD570 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS
2sd5702.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5702 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT
2sd5703.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5703 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
Otros transistores... 2SD568O, 2SD568R, 2SD568Y, 2SD569, 2SD569O, 2SD569R, 2SD569Y, 2SD57, TIP3055, 2SD571, 2SD572, 2SD573, 2SD574, 2SD574A, 2SD575, 2SD575L, 2SD576
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