2SD570 Specs and Replacement
Type Designator: 2SD570
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
2SD570 Substitution
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2SD570 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD570 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5702 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RAT... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD5703 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
Detailed specifications: 2SD568O, 2SD568R, 2SD568Y, 2SD569, 2SD569O, 2SD569R, 2SD569Y, 2SD57, TIP3055, 2SD571, 2SD572, 2SD573, 2SD574, 2SD574A, 2SD575, 2SD575L, 2SD576
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