2SD583 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD583

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO3

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2SD583 datasheet

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 2sd583.pdf pdf_icon

2SD583

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD583 DESCRIPTION High Current Capability Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL

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 2sd582.pdf pdf_icon

2SD583

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 2sd581.pdf pdf_icon

2SD583

isc Silicon NPN Power Transistor 2SD581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 40 60W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(T =25

 9.3. Size:207K  inchange semiconductor
 2sd582.pdf pdf_icon

2SD583

isc Silicon NPN Power Transistor 2SD582 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@ I = 7A CE(sat) C Complement to Type 2SB612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 80 100W audio amplifier power output applications.

MOSTRAR MÁS

Otros transistores... 2SD579, 2SD579A, 2SD58, 2SD580, 2SD581, 2SD581A, 2SD582, 2SD582A, BD335, 2SD585, 2SD586, 2SD586A, 2SD587, 2SD587A, 2SD588, 2SD588A, 2SD589