2SD583 Specs and Replacement

Type Designator: 2SD583

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO3

 2SD583 Substitution

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2SD583 datasheet

 ..1. Size:181K  inchange semiconductor

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2SD583

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD583 DESCRIPTION High Current Capability Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ... See More ⇒

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2SD583

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2SD583

isc Silicon NPN Power Transistor 2SD581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 40 60W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

 9.3. Size:207K  inchange semiconductor

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2SD583

isc Silicon NPN Power Transistor 2SD582 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@ I = 7A CE(sat) C Complement to Type 2SB612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 80 100W audio amplifier power output applications. ... See More ⇒

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Detailed specifications: 2SD579, 2SD579A, 2SD58, 2SD580, 2SD581, 2SD581A, 2SD582, 2SD582A, BD335, 2SD585, 2SD586, 2SD586A, 2SD587, 2SD587A, 2SD588, 2SD588A, 2SD589

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