2SD600KE Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD600KE

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 8 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO126

 Búsqueda de reemplazo de 2SD600KE

- Selecciónⓘ de transistores por parámetros

 

2SD600KE datasheet

 7.1. Size:115K  sanyo
 2sd600k.pdf pdf_icon

2SD600KE

Ordering number 346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 Emitter 2 Collector 3 Base ( ) 2SB631, 631K

 7.2. Size:405K  blue-rocket-elect
 2sd600k.pdf pdf_icon

2SD600KE

2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V , 2SB631K(BR3CA631KQF) CEO High VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63

 7.3. Size:195K  inchange semiconductor
 2sd600 2sd600k.pdf pdf_icon

2SD600KE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mount

 7.4. Size:214K  inchange semiconductor
 2sd600k.pdf pdf_icon

2SD600KE

isc Silicon NPN Power Transistor 2SD600K DESCRIPTION High Collector Current-I = 1.0A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB631K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSO

MOSTRAR MÁS

Otros transistores... 2SD599, 2SD60, 2SD600, 2SD600D, 2SD600E, 2SD600F, 2SD600K, 2SD600KD, BC556, 2SD600KF, 2SD601, 2SD601A, 2SD602, 2SD602A, 2SD603, 2SD604, 2SD605