2SD648A Todos los transistores

 

2SD648A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD648A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2500 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 400 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO3A-1

 Búsqueda de reemplazo de transistor bipolar 2SD648A

 

2SD648A Datasheet (PDF)

 8.1. Size:98K  toshiba
2sd648.pdf

2SD648A 2SD648A

 9.1. Size:102K  toshiba
2sd647 2sd697.pdf

2SD648A 2SD648A

 9.2. Size:92K  toshiba
2sd641.pdf

2SD648A 2SD648A

 9.3. Size:91K  no
2sd640.pdf

2SD648A 2SD648A

 9.4. Size:221K  inchange semiconductor
2sd649.pdf

2SD648A 2SD648A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Reliability APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCES Collector-Emitter V

 9.5. Size:199K  inchange semiconductor
2sd640.pdf

2SD648A 2SD648A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 5ACE(sat) CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applicatio

 9.6. Size:205K  inchange semiconductor
2sd641.pdf

2SD648A 2SD648A

isc Silicon NPN Power Transistor 2SD641DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applications.High power amplifier applications.ABSOLUTE MAXI

Otros transistores... 2SD643 , 2SD644 , 2SD645 , 2SD646 , 2SD646A , 2SD647 , 2SD647A , 2SD648 , TIP31 , 2SD649 , 2SD65 , 2SD650 , 2SD650H , 2SD651 , 2SD652 , 2SD654 , 2SD655 .

History: MJD340T4 | 2SB350A | 2SA1909 | BU103A

 

 
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