All Transistors. 2SD648A Datasheet

 

2SD648A Datasheet and Replacement


   Type Designator: 2SD648A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2500 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 400 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO3A-1
      - BJT Cross-Reference Search

   

2SD648A Datasheet (PDF)

 8.1. Size:98K  toshiba
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2SD648A

 9.1. Size:102K  toshiba
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2SD648A

 9.2. Size:92K  toshiba
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2SD648A

 9.3. Size:91K  no
 2sd640.pdf pdf_icon

2SD648A

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC2134 | MCH3245 | GT804V | 3CA1370 | 2N5052SM | MRF5812 | 2N6208

Keywords - 2SD648A transistor datasheet

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