2SD650 Todos los transistores

 

2SD650 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD650
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: TO3
 

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2SD650 datasheet

 ..1. Size:196K  inchange semiconductor
2sd650.pdf pdf_icon

2SD650

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD650 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as Switching regu

 9.1. Size:29K  hitachi
2sd655.pdf pdf_icon

2SD650

2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD655 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak current iC(peak) 1.0 A

 9.2. Size:589K  blue-rocket-elect
2sd655.pdf pdf_icon

2SD650

2SD655(BR3DG655K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low frequency. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base PIN 2

 9.3. Size:199K  inchange semiconductor
2sd651.pdf pdf_icon

2SD650

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD651 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.

Otros transistores... 2SD646 , 2SD646A , 2SD647 , 2SD647A , 2SD648 , 2SD648A , 2SD649 , 2SD65 , BC546 , 2SD650H , 2SD651 , 2SD652 , 2SD654 , 2SD655 , 2SD656 , 2SD657 , 2SD658 .

 

 

 


 
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