2SD651 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD651
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar 2SD651
2SD651 Datasheet (PDF)
2sd651.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD651DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.
2sd655.pdf
2SD655Silicon NPN EpitaxialApplicationLow frequency power amplifier, MutingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD655Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollector peak current iC(peak) 1.0 A
2sd655.pdf
2SD655(BR3DG655K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low frequency. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1Base PIN 2
2sd657.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD657DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Excellent Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers appl
2sd652.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD652DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 500V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
2sd650.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD650DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
Otros transistores... 2SD647 , 2SD647A , 2SD648 , 2SD648A , 2SD649 , 2SD65 , 2SD650 , 2SD650H , D209L , 2SD652 , 2SD654 , 2SD655 , 2SD656 , 2SD657 , 2SD658 , 2SD658H , 2SD66 .
History: 2SD648A | MJD340T4 | 2SA1909 | 2SB350A | BU103A
History: 2SD648A | MJD340T4 | 2SA1909 | 2SB350A | BU103A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050