2SD651
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD651
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 400
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package:
TO66
2SD651
Transistor Equivalent Substitute - Cross-Reference Search
2SD651
Datasheet (PDF)
..1. Size:199K inchange semiconductor
2sd651.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD651DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.
9.1. Size:29K hitachi
2sd655.pdf
2SD655Silicon NPN EpitaxialApplicationLow frequency power amplifier, MutingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD655Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollector peak current iC(peak) 1.0 A
9.2. Size:589K blue-rocket-elect
2sd655.pdf
2SD655(BR3DG655K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low frequency. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1Base PIN 2
9.3. Size:196K inchange semiconductor
2sd657.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD657DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Excellent Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers appl
9.4. Size:198K inchange semiconductor
2sd652.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD652DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 500V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
9.5. Size:196K inchange semiconductor
2sd650.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD650DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
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