2SD665 Todos los transistores

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD665 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Current Capability Excellent Safe Operating Area Complement to Type 2SB645 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Abso

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SD667L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier NPN Complementary Pair with 2SB647/A Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Compl

2SD667(A)-B MCC Micro Commercial Components TM 2SD667(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SD667(A)-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Capable of 0.9Watts of Power Dissipation. Pla

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Abso

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Abso

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum

UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel 2SD669xL-x-AB3-R 2SD669xG-

UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-AE3-R 2SD6

2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD667 2SD667A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base voltage VEBO 55V

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO

2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCE

2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES A D Low Frequency Power Amplifier Complementary Pair with 2SB647A B K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60 120 100 200 160 320 N G H 1 Emitte

2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 2.7 0.2 7.6 0.2 FEATURES 1.3 0.2 4.0 0.1 Power dissipation 10.8 0.2 PCM 1mW Tamb=25 O3.1 0.1 Collector current 1 2 3 2.2 0.1 ICM 1.5 A 1.27 0.1 Collector-base voltage 15.5 0.2 V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SD667,2SD667A TRANSISTOR (NPN) 1. EMITTER FEATURES Low Frequency Power Amplifier 2. COLLECTOR Complementary Pair with 2SB647/A 3. BASE Equivalent Circuit D667=Device code Solid dot = Green molding compound device, D667 if none, the normal device XXX=Code

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 TO- 126C 2SD669A TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector- Base Voltage 180 V VCEO Collector-E

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Volt

2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Low frequency power amplifier complementary pair 1.500 with 2SB649/A 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 0.000 0.300 Symbol Parameter Value Units11.000 VCBO Collector- Base Voltage 180 V 2.

2SD667/2SD667A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.800 6.200 Complementary pair with 2SB647/A 8.400 MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.800 0.900 1.100 Symbol Parameter Value Units 0.400 VCBO Collector- Base Voltage 120 V 0.600 VCEO Collector-Emitter Voltage 2SD667 8

2SD667/2SD667A TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350 Symbol Parameter Value Units 0.550 13.800 14.200 VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Vol

2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol 2SD669 2SD669A Unit VCBO 180 180 V Collector-Emitter Voltage VCEO 120 160 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 V Collector Current IC 1.5 A PD 1.0 W Power Disspation Tj 150 C Junction T

2SD669AD Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features 2SB649AD Complementary pair with 2SB649AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni

2SD667(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(A) Complementary pair with 2SB647(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

2SD669(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(A) Complementary pair with 2SB649(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

2SD667(A)(BR3DG667(A)L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(BR3CG647L)/2SB647A(BR3CG647AL) Complementary pair with 2SB647(BR3CG647L)/2SB647A(BR3CG647AL). / Applications Low frequency power ampli

2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF) Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). / Applications Low frequency power

RoHS RoHS 2SD669AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose NPN Power Transistor 1.5A / 120V, 160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SB649AM/2SB649AM-A NPN E All dimensions in millimeters

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION With TO-126 package Complement to type 2SB649/649A High breakdown voltage VCEO 120/160V High current 1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collect

isc Silicon NPN Power Transistor 2SD669A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SD669 DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD663 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as Switching regu