2SD670 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD670  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10000

Encapsulados: TO3

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2SD670 datasheet

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 2sd670.pdf pdf_icon

2SD670

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD670 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stage

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 2sd673a.pdf pdf_icon

2SD670

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 2sd679.pdf pdf_icon

2SD670

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 3A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose ampl

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 2sd673.pdf pdf_icon

2SD670

isc Silicon NPN Power Transistors 2SD673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SB653 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2

MOSTRAR MÁS

Otros transistores... 2SD669, 2SD669A, 2SD669AB, 2SD669AC, 2SD669B, 2SD669C, 2SD669D, 2SD67, A1013, 2SD670H, 2SD671, 2SD672, 2SD673, 2SD673A, 2SD674, 2SD674A, 2SD675