2SD675A Todos los transistores

 

2SD675A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD675A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 140 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SD675A

 

2SD675A Datasheet (PDF)

 8.1. Size:212K  inchange semiconductor
 2sd675.pdf

2SD675A 2SD675A

isc Silicon NPN Power Transistors 2SD675DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB655Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:38K  no
 2sd673a.pdf

2SD675A

 9.2. Size:188K  inchange semiconductor
 2sd679.pdf

2SD675A 2SD675A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD679DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose ampl

 9.3. Size:207K  inchange semiconductor
 2sd673.pdf

2SD675A 2SD675A

isc Silicon NPN Power Transistors 2SD673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SB653Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2

 9.4. Size:184K  inchange semiconductor
 2sd670.pdf

2SD675A 2SD675A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD670DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stage

 9.5. Size:206K  inchange semiconductor
 2sd676.pdf

2SD675A 2SD675A

isc Silicon NPN Power Transistors 2SD676DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 125W(Max)@T =25C CComplement to Type 2SB656Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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