2SD675A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD675A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 140
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD675A
2SD675A
Datasheet (PDF)
8.1. Size:212K inchange semiconductor
2sd675.pdf 
isc Silicon NPN Power Transistors 2SD675DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB655Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
9.2. Size:188K inchange semiconductor
2sd679.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD679DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose ampl
9.3. Size:207K inchange semiconductor
2sd673.pdf
isc Silicon NPN Power Transistors 2SD673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SB653Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2
9.4. Size:184K inchange semiconductor
2sd670.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD670DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stage
9.5. Size:206K inchange semiconductor
2sd676.pdf
isc Silicon NPN Power Transistors 2SD676DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 125W(Max)@T =25C CComplement to Type 2SB656Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
Otros transistores... 2SA1179M4
, 2SA1179M5
, 2SA1179M6
, 2SA1179M7
, 2SA118
, 2SA1180
, 2SA1180A
, 2SA1182
, BD777
, 2SA1182Y
, 2SA1183
, 2SA1184
, 2SA1185
, 2SA1186
, 2SA1186O
, 2SA1186P
, 2SA1186Y
.
