2SD675A Datasheet and Replacement
Type Designator: 2SD675A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO3
2SD675A Substitution
2SD675A Datasheet (PDF)
2sd675.pdf

isc Silicon NPN Power Transistors 2SD675DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB655Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =
2sd679.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD679DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose ampl
2sd673.pdf

isc Silicon NPN Power Transistors 2SD673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SB653Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2
Datasheet: 2SD670H , 2SD671 , 2SD672 , 2SD673 , 2SD673A , 2SD674 , 2SD674A , 2SD675 , 2SC5198 , 2SD676 , 2SD676A , 2SD677 , 2SD678 , 2SD678A , 2SD679 , 2SD679A , 2SD68 .
History: BTA1972K3 | OC466K | 2SD1482 | GES4250A | FJY4008R | 2SC5393 | 2SC5355
Keywords - 2SD675A transistor datasheet
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History: BTA1972K3 | OC466K | 2SD1482 | GES4250A | FJY4008R | 2SC5393 | 2SC5355



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