2SD681 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD681
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 7000
Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar 2SD681

2SD681 Datasheet (PDF)

9.1. Size:116K toshiba
2sd687.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.2. Size:78K toshiba
2sd688.pdf

9.3. Size:206K inchange semiconductor
2sd683.pdf

isc Silicon NPN Darlington Power Transistor 2SD683DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min.)@ I = 5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage and high power switching applications.Motor driver applications.ABSOLUTE MAXIMUM RATIN

9.4. Size:207K inchange semiconductor
2sd684.pdf

isc Silicon NPN Darlington Power Transistor 2SD684DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain-: h = 1500(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applications.

9.5. Size:209K inchange semiconductor
2sd687.pdf

isc Silicon NPN Darlington Power Transistor 2SD687DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.

9.6. Size:212K inchange semiconductor
2sd689.pdf

isc Silicon NPN Darlington Power Transistor 2SD689DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CComplement to Type 2SB679Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

9.7. Size:210K inchange semiconductor
2sd686.pdf

isc Silicon NPN Darlington Power Transistor 2SD686DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB676Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

Liste

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