2SD681 - Даташиты. Аналоги. Основные параметры

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isc Silicon NPN Darlington Power Transistor 2SD683DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min.)@ I = 5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage and high power switching applications.Motor driver applications.ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Darlington Power Transistor 2SD684DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain-: h = 1500(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applications.

isc Silicon NPN Darlington Power Transistor 2SD687DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.

isc Silicon NPN Darlington Power Transistor 2SD689DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CComplement to Type 2SB679Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon NPN Darlington Power Transistor 2SD686DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB676Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS