2SD692 Todos los transistores

isc Silicon NPN Darlingtion Power Transistor 2SD692 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 1000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD693 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as Switching regu

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD690 DESCRIPTION Collector Current I = 7A C Collector-Emitter BreakdownVoltage- V = 70V(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY