2SD70 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD70
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO66
Búsqueda de reemplazo de 2SD70
2SD70 datasheet
2sd705.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD705 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE
2sd706.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD706 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver General purpose power amplifiers ABSOLUTE
Otros transistores... 2SD694 , 2SD695 , 2SD696 , 2SD696A , 2SD697 , 2SD697A , 2SD698 , 2SD699 , A1941 , 2SD700 , 2SD702 , 2SD703 , 2SD704 , 2SD705 , 2SD706 , 2SD707 , 2SD708 .
History: 2SA1021 | 2SA1034
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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