2SD729H Todos los transistores

 9.1. Size:38K  no
 2sd721.pdf

 9.2. Size:25K  no
 2sd72.pdf

 9.3. Size:211K  inchange semiconductor
 2sd725.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD725 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

 9.4. Size:213K  inchange semiconductor
 2sd728.pdf

isc Silicon NPN Power Transistor 2SD728 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB692 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE

 9.5. Size:213K  inchange semiconductor
 2sd726.pdf

isc Silicon NPNPower Transistor 2SD726 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SB690 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.6. Size:206K  inchange semiconductor
 2sd727.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD727 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB691 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching

 9.7. Size:186K  inchange semiconductor
 2sd723.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SD723 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO DC Current Gain -h = 50(Min)@ I = 0.5A FE C Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and