2SD756A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD755, 2SD756, 2SD756ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD755, 2SD756, 2SD756AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD755 2SD756 2SD756A UnitCollector to base voltage VCBO 100 120 140 VCollector to emitter vol

isc Silicon NPN Power Transistor 2SD750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD753DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SB723Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applica