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2SD757 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD757
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.25 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 3.8 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SD757

 

2SD757 Datasheet (PDF)

 ..1. Size:67K  hitachi
2sd757 2sd758.pdf

2SD757

 9.1. Size:128K  panasonic
2sb713 2sd751.pdf

2SD757
2SD757

 9.2. Size:31K  hitachi
2sd755 2sd756.pdf

2SD757
2SD757

2SD755, 2SD756, 2SD756ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD755, 2SD756, 2SD756AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD755 2SD756 2SD756A UnitCollector to base voltage VCBO 100 120 140 VCollector to emitter vol

 9.3. Size:207K  inchange semiconductor
2sd750.pdf

2SD757
2SD757

isc Silicon NPN Power Transistor 2SD750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNIT

 9.4. Size:199K  inchange semiconductor
2sd753.pdf

2SD757
2SD757

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD753DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SB723Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applica

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: ED8550

 

 
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History: ED8550

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Recientemente añadidas las descripciónes de los transistores:

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