2SD757 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD757
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 3.8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SD757 Transistor Equivalent Substitute - Cross-Reference Search
2SD757 Datasheet (PDF)
2sd755 2sd756.pdf
2SD755, 2SD756, 2SD756ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD755, 2SD756, 2SD756AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD755 2SD756 2SD756A UnitCollector to base voltage VCBO 100 120 140 VCollector to emitter vol
2sd750.pdf
isc Silicon NPN Power Transistor 2SD750DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNIT
2sd753.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD753DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SB723Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applica
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
