2SD757 Specs and Replacement
Type Designator: 2SD757
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 3.8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO220
2SD757 Substitution
- BJT ⓘ Cross-Reference Search
2SD757 datasheet
2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD755 2SD756 2SD756A Unit Collector to base voltage VCBO 100 120 140 V Collector to emitter vol... See More ⇒
isc Silicon NPN Power Transistor 2SD750 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT... See More ⇒
Detailed specifications: 2SD750, 2SD751, 2SD752, 2SD753, 2SD754, 2SD755, 2SD756, 2SD756A, C945, 2SD758, 2SD759, 2SD75A, 2SD75AH, 2SD75H, 2SD760, 2SD761, 2SD762
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