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2SD777 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD777
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: TO3
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2SD777 Datasheet (PDF)

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2SD777

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 9.1. Size:161K  nec
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2SD777

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2SD777

 9.3. Size:208K  inchange semiconductor
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2SD777

isc Silicon NPN Power Transistor 2SD772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.6V(Max.) @I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KMBTA05 | 2SC1400U | ECG2417 | 2SC706 | DTA602 | ECG311

 

 
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