2SD777 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD777  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 55 V

Tensión colector-emisor (Vce): 55 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 500

Encapsulados: TO3

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2SD777 datasheet

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2SD777

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2SD777

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2SD777

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2SD777

isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... 2SD770, 2SD771, 2SD772, 2SD772A, 2SD772B, 2SD773, 2SD774, 2SD776, S9014, 2SD778, 2SD779, 2SD77A, 2SD77AH, 2SD77H, 2SD78, 2SD780, 2SD780DW1