2SD777 Datasheet. Specs and Replacement
Type Designator: 2SD777 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO3
2SD777 Substitution
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2SD777 datasheet
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isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
Detailed specifications: 2SD770, 2SD771, 2SD772, 2SD772A, 2SD772B, 2SD773, 2SD774, 2SD776, S9014, 2SD778, 2SD779, 2SD77A, 2SD77AH, 2SD77H, 2SD78, 2SD780, 2SD780DW1
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