2SD778 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD778 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hFE): 650
Encapsulados: TO92MOD
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2SD778 datasheet
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2sd772.pdf
isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... 2SD771, 2SD772, 2SD772A, 2SD772B, 2SD773, 2SD774, 2SD776, 2SD777, BC327, 2SD779, 2SD77A, 2SD77AH, 2SD77H, 2SD78, 2SD780, 2SD780DW1, 2SD780DW2
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