All Transistors. 2SD778 Datasheet

 

2SD778 Datasheet and Replacement


   Type Designator: 2SD778
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 650
   Noise Figure, dB: -
   Package: TO92MOD
 

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2SD778 Datasheet (PDF)

 9.1. Size:231K  toshiba
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2SD778

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 9.2. Size:161K  nec
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2SD778

 9.3. Size:166K  nec
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2SD778

 9.4. Size:208K  inchange semiconductor
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2SD778

isc Silicon NPN Power Transistor 2SD772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.6V(Max.) @I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

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Datasheet: 2SD771 , 2SD772 , 2SD772A , 2SD772B , 2SD773 , 2SD774 , 2SD776 , 2SD777 , BC327 , 2SD779 , 2SD77A , 2SD77AH , 2SD77H , 2SD78 , 2SD780 , 2SD780DW1 , 2SD780DW2 .

History: 2SA2039-TL-E | 2SC4508 | PN3708 | PN4140 | A159 | 2SC4510 | BUT51P

Keywords - 2SD778 transistor datasheet

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