2SD779 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD779
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hFE): 650
Encapsulados: TO92MOD
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2SD779 datasheet
2sd777.pdf
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2sd772.pdf
isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... 2SD772 , 2SD772A , 2SD772B , 2SD773 , 2SD774 , 2SD776 , 2SD777 , 2SD778 , A733 , 2SD77A , 2SD77AH , 2SD77H , 2SD78 , 2SD780 , 2SD780DW1 , 2SD780DW2 , 2SD780DW3 .
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