2SD779 Todos los transistores

 

2SD779 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD779
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 650
   Paquete / Cubierta: TO92MOD
 

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2SD779 Datasheet (PDF)

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2SD779

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 9.2. Size:161K  nec
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2SD779

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2SD779

 9.4. Size:208K  inchange semiconductor
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2SD779

isc Silicon NPN Power Transistor 2SD772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.6V(Max.) @I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: SRC1205SF | 2SB242A | 45192

 

 
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