2SD779 Datasheet. Specs and Replacement

Type Designator: 2SD779  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 650

Noise Figure, dB: -

Package: TO92MOD

 2SD779 Substitution

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2SD779 datasheet

 9.1. Size:231K  toshiba

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2SD779

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2SD779

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 9.4. Size:208K  inchange semiconductor

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2SD779

isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

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Detailed specifications: 2SD772, 2SD772A, 2SD772B, 2SD773, 2SD774, 2SD776, 2SD777, 2SD778, A733, 2SD77A, 2SD77AH, 2SD77H, 2SD78, 2SD780, 2SD780DW1, 2SD780DW2, 2SD780DW3

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