All Transistors. 2SD779 Datasheet

 

2SD779 Datasheet and Replacement


   Type Designator: 2SD779
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 650
   Noise Figure, dB: -
   Package: TO92MOD

 2SD779 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD779 Datasheet (PDF)

 9.1. Size:231K  toshiba
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2SD779

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 9.2. Size:161K  nec
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2SD779

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 9.3. Size:166K  nec
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2SD779

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 9.4. Size:208K  inchange semiconductor
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2SD779

isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

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Datasheet: 2SD772 , 2SD772A , 2SD772B , 2SD773 , 2SD774 , 2SD776 , 2SD777 , 2SD778 , A733 , 2SD77A , 2SD77AH , 2SD77H , 2SD78 , 2SD780 , 2SD780DW1 , 2SD780DW2 , 2SD780DW3 .

History: DSA3402

Keywords - 2SD779 transistor datasheet

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