2SD77H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD77H  📄📄 

Material: Ge

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1.8 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO1

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2SD77H datasheet

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2SD77H

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2SD77H

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2SD77H

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2SD77H

isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

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