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2SD806 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD806
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 400 W
   Tensión colector-base (Vcb): 600 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 50 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO3A-1
 

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2SD806 Datasheet (PDF)

 9.1. Size:213K  inchange semiconductor
 2sd807.pdf pdf_icon

2SD806

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD807DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM

 9.2. Size:204K  inchange semiconductor
 2sd803.pdf pdf_icon

2SD806

isc Silicon NPN Darlingtion Power Transistor 2SD803DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 2000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier

 9.3. Size:181K  inchange semiconductor
 2sd800.pdf pdf_icon

2SD806

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD800DESCRIPTIONHigh Breakdown Voltage-: V = 750V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX

Otros transistores... 2SD799 , 2SD80 , 2SD800 , 2SD801 , 2SD802 , 2SD803 , 2SD804 , 2SD805 , 13001-A , 2SD807 , 2SD808 , 2SD809 , 2SD81 , 2SD810 , 2SD811 , 2SD812 , 2SD813 .

History: 2SA985 | 2N364

 

 
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