2SD806 Datasheet. Specs and Replacement
Type Designator: 2SD806 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 400 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO3A-1
2SD806 Substitution
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2SD806 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD807 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low collector saturation voltage With TO-3 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM ... See More ⇒
isc Silicon NPN Darlingtion Power Transistor 2SD803 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 2000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD800 DESCRIPTION High Breakdown Voltage- V = 750V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAX... See More ⇒
Detailed specifications: 2SD799, 2SD80, 2SD800, 2SD801, 2SD802, 2SD803, 2SD804, 2SD805, MPSA42, 2SD807, 2SD808, 2SD809, 2SD81, 2SD810, 2SD811, 2SD812, 2SD813
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History: D28C3 | D28C5 | D28A7 | MJE13003I6
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