2SD806 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD806
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 400 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3A-1
2SD806 Transistor Equivalent Substitute - Cross-Reference Search
2SD806 Datasheet (PDF)
2sd807.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD807DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM
2sd803.pdf
isc Silicon NPN Darlingtion Power Transistor 2SD803DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 2000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier
2sd800.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD800DESCRIPTIONHigh Breakdown Voltage-: V = 750V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
