2SD807 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD807 Datasheet (PDF)

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD807 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low collector saturation voltage With TO-3 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM

9.1. Size:204K inchange semiconductor
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isc Silicon NPN Darlingtion Power Transistor 2SD803 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h = 2000 (Min) @ I =1 Adc FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier

9.2. Size:181K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD800 DESCRIPTION High Breakdown Voltage- V = 750V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAX

Otros transistores... 2SD80 , 2SD800 , 2SD801 , 2SD802 , 2SD803 , 2SD804 , 2SD805 , 2SD806 , 2SC828 , 2SD808 , 2SD809 , 2SD81 , 2SD810 , 2SD811 , 2SD812 , 2SD813 , 2SD814 .