2SD807 Datasheet and Replacement
Type Designator: 2SD807
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3
2SD807 Substitution
2SD807 Datasheet (PDF)
2sd807.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD807DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM
2sd803.pdf

isc Silicon NPN Darlingtion Power Transistor 2SD803DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 2000 (Min) @ I =1 AdcFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier
2sd800.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD800DESCRIPTIONHigh Breakdown Voltage-: V = 750V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX
Datasheet: 2SD80 , 2SD800 , 2SD801 , 2SD802 , 2SD803 , 2SD804 , 2SD805 , 2SD806 , B647 , 2SD808 , 2SD809 , 2SD81 , 2SD810 , 2SD811 , 2SD812 , 2SD813 , 2SD814 .
History: 2N3793 | BC858CQ | 2SD81 | 2N4348 | 2N2062 | 2SA1707S-AN | KSC3233
Keywords - 2SD807 transistor datasheet
2SD807 cross reference
2SD807 equivalent finder
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History: 2N3793 | BC858CQ | 2SD81 | 2N4348 | 2N2062 | 2SA1707S-AN | KSC3233



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