2SD812 Datasheet. Equivalente

 ..1. Size:213K  inchange semiconductor
 2sd812.pdf

isc Silicon NPN Power Transistor 2SD812 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB747 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. Suitable for 15 20W home stereo output amplifier a

 9.1. Size:93K  toshiba
 2sd819.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:41K  panasonic
 2sd814 e.pdf

Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and th

 9.3. Size:37K  panasonic
 2sd814.pdf

Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and th

 9.4. Size:914K  kexin
 2sd814a.pdf

SMD Type Transistors NPN Transistors 2SD814A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volta

 9.5. Size:890K  kexin
 2sd814.pdf

SMD Type Transistors NPN Transistors 2SD814 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

 9.6. Size:203K  inchange semiconductor
 2sd818.pdf

isc Silicon NPN Power Transistor 2SD818 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.7. Size:203K  inchange semiconductor
 2sd819.pdf

isc Silicon NPN Power Transistor 2SD819 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.8. Size:180K  inchange semiconductor
 2sd811.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD811 DESCRIPTION High Breakdown Voltage- V = 900V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAX

 9.9. Size:179K  inchange semiconductor
 2sd817.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD817 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low collector saturation voltage Wide area of safe operation With TO-3 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output a