isc Silicon NPN Power Transistor 2SD812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB747Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.Suitable for 15~20W home stereo output amplifier a

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Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th

Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th

SMD Type TransistorsNPN Transistors2SD814ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792A 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta

SMD Type TransistorsNPN Transistors2SD814SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

isc Silicon NPN Power Transistor 2SD818DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD819DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD811DESCRIPTIONHigh Breakdown Voltage-: V = 900V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD817DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWide area of safe operationWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output a