2SD819
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD819
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 600
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Capacitancia de salida (Cc): 95
pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SD819
2SD819
Datasheet (PDF)
..1. Size:93K toshiba
2sd819.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
..2. Size:203K inchange semiconductor
2sd819.pdf
isc Silicon NPN Power Transistor 2SD819DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
9.1. Size:41K panasonic
2sd814 e.pdf
Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th
9.2. Size:37K panasonic
2sd814.pdf
Transistor2SD814, 2SD814ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15High collector to emitter voltage VCEO.Low noise voltage NV.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and th
9.3. Size:914K kexin
2sd814a.pdf
SMD Type TransistorsNPN Transistors2SD814ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792A 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta
9.4. Size:890K kexin
2sd814.pdf
SMD Type TransistorsNPN Transistors2SD814SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage
9.5. Size:203K inchange semiconductor
2sd818.pdf
isc Silicon NPN Power Transistor 2SD818DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
9.6. Size:180K inchange semiconductor
2sd811.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD811DESCRIPTIONHigh Breakdown Voltage-: V = 900V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etcABSOLUTE MAX
9.7. Size:213K inchange semiconductor
2sd812.pdf
isc Silicon NPN Power Transistor 2SD812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB747Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.Suitable for 15~20W home stereo output amplifier a
9.8. Size:179K inchange semiconductor
2sd817.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD817DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow collector saturation voltageWide area of safe operationWith TO-3 PackageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output a
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
