2SD819 - описание и поиск аналогов

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isc Silicon NPN Power Transistor 2SD819 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and th

Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and th

SMD Type Transistors NPN Transistors 2SD814A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volta

SMD Type Transistors NPN Transistors 2SD814 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High collector to emitter voltage VCEO. Low noise voltage NV.. Complimentary to 2SB792 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage

isc Silicon NPN Power Transistor 2SD818 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD811 DESCRIPTION High Breakdown Voltage- V = 900V (Min) CBO High Switching Speed Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAX

isc Silicon NPN Power Transistor 2SD812 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB747 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. Suitable for 15 20W home stereo output amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD817 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low collector saturation voltage Wide area of safe operation With TO-3 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high voltage power switching TV horizontal deflection output a