2SD822 Todos los transistores

 

2SD822 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD822
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Capacitancia de salida (Cc): 165 pF
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SD822

 

2SD822 Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
2sd822.pdf

2SD822
2SD822

isc Silicon NPN Power Transistor 2SD822DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 9.1. Size:646K  sanyo
2sd823.pdf

2SD822
2SD822

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 9.2. Size:132K  sanyo
2sd826.pdf

2SD822
2SD822

Ordering number:EN538ENPN Epitaxial Planar Silicon Transistor2SD82620V/5A Switching ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm High hFE.2009A Large current capacity.[2SD826]8.02.74.03.01.60.80.80.60.51 : Emitter1 2 3 2 : Collector3 : Base2.4SANYO : TO-1264.8SpecificationsAbsolute Maximum Ratings at Ta = 2

 9.3. Size:192K  wingshing
2sd820.pdf

2SD822

2SD820 SILICON DIFFUSED POWER TRANSISTORGENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a metal envelope , primarily for use in switching power circuites of colour television receiversTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)VCEO - 6

 9.4. Size:208K  inchange semiconductor
2sd823.pdf

2SD822
2SD822

isc Silicon NPN Power Transistor 2SD823DESCRIPTIONCollector Current: I = 6ACCollector-Emitter Breakdown Voltage-: V = 90V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

 9.5. Size:203K  inchange semiconductor
2sd820.pdf

2SD822
2SD822

isc Silicon NPN Power Transistor 2SD820DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 9.6. Size:203K  inchange semiconductor
2sd821.pdf

2SD822
2SD822

isc Silicon NPN Power Transistor 2SD821DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 9.7. Size:215K  inchange semiconductor
2sd826.pdf

2SD822
2SD822

isc Silicon NPN Power Transistor 2SD826DESCRIPTIONLarge Current Capability-I = 5ACHigh DC Current Gain-: h = 120-560 @ I = 0.5AFE CLow Saturation Voltage -: V = 0.5V(Max)@ I = 3A, I = 60mACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts aud

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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