2SD829 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD829
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 150 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 4000
Paquete / Cubierta: MT-200
2SD829 Datasheet (PDF)
2sd823.pdf

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2sd826.pdf

Ordering number:EN538ENPN Epitaxial Planar Silicon Transistor2SD82620V/5A Switching ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm High hFE.2009A Large current capacity.[2SD826]8.02.74.03.01.60.80.80.60.51 : Emitter1 2 3 2 : Collector3 : Base2.4SANYO : TO-1264.8SpecificationsAbsolute Maximum Ratings at Ta = 2
2sd820.pdf

2SD820 SILICON DIFFUSED POWER TRANSISTORGENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a metal envelope , primarily for use in switching power circuites of colour television receiversTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)VCEO - 6
2sd823.pdf

isc Silicon NPN Power Transistor 2SD823DESCRIPTIONCollector Current: I = 6ACCollector-Emitter Breakdown Voltage-: V = 90V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .



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