Биполярный транзистор 2SD829 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD829
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 4000
Корпус транзистора: MT-200
2SD829 Datasheet (PDF)
2sd823.pdf
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2sd826.pdf
Ordering number:EN538ENPN Epitaxial Planar Silicon Transistor2SD82620V/5A Switching ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm High hFE.2009A Large current capacity.[2SD826]8.02.74.03.01.60.80.80.60.51 : Emitter1 2 3 2 : Collector3 : Base2.4SANYO : TO-1264.8SpecificationsAbsolute Maximum Ratings at Ta = 2
2sd820.pdf
2SD820 SILICON DIFFUSED POWER TRANSISTORGENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a metal envelope , primarily for use in switching power circuites of colour television receiversTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)VCEO - 6
2sd823.pdf
isc Silicon NPN Power Transistor 2SD823DESCRIPTIONCollector Current: I = 6ACCollector-Emitter Breakdown Voltage-: V = 90V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sd820.pdf
isc Silicon NPN Power Transistor 2SD820DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)
2sd822.pdf
isc Silicon NPN Power Transistor 2SD822DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)
2sd821.pdf
isc Silicon NPN Power Transistor 2SD821DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)
2sd826.pdf
isc Silicon NPN Power Transistor 2SD826DESCRIPTIONLarge Current Capability-I = 5ACHigh DC Current Gain-: h = 120-560 @ I = 0.5AFE CLow Saturation Voltage -: V = 0.5V(Max)@ I = 3A, I = 60mACE(sat) C BGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuited for the output stage of 3 watts aud
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050