2SD830 Todos los transistores

 

2SD830 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD830

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 10000

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD830

 

2SD830 Datasheet (PDF)

5.1. 2sd834.pdf Size:125K _fuji

2SD830
2SD830

5.2. 2sd833.pdf Size:96K _fuji

2SD830
2SD830

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 5.3. 2sd835.pdf Size:101K _fuji

2SD830
2SD830

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.4. 2sd838.pdf Size:25K _no

2SD830

 5.5. 2sd834.pdf Size:117K _inchange_semiconductor

2SD830
2SD830

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Electronic ignitor Ў¤ Relay and solenoid drivers Ў¤ Switching regulators Ў¤ Motor controls PINNING PIN 1 2 3 Base DESCRIPTION 2SD834 Ab

5.6. 2sd837.pdf Size:133K _inchange_semiconductor

2SD830
2SD830

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD837 DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Vo

5.7. 2sd833.pdf Size:262K _inchange_semiconductor

2SD830
2SD830

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD833 DESCRIPTION ·High DC Current Gain- : hFE= 4000(Min) @IC= 3A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 3A APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=2

5.8. 2sd835.pdf Size:313K _inchange_semiconductor

2SD830
2SD830

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD835 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A APPLICATIONS ·Electronic ignitor ·Relay& solenoid drivers ·Motor controls ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARA

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SD830
  2SD830
  2SD830
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: RD9FE-V | RD9FE-T | RD9FE-R | FJP3305H2 | CHT807PTS | CHT807PTR | CHT807PTQ | 3DA4544Y | 3DA4544O | 3DA4544R | 3DD2553 | 2SD1710C | NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E |

 

 

 
Back to Top