2SD844O Todos los transistores

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2SD844O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD844O

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 15 MHz

Capacitancia de salida (Cc): 250 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de transistor bipolar 2SD844O

 

2SD844O Datasheet (PDF)

4.1. 2sd844.pdf Size:125K _inchange_semiconductor

2SD844O
2SD844O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD844 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Complement to type 2SB754 Ў¤ High collector current :IC=7A Ў¤ Low collector saturation voltage Ў¤ High power dissipation APPLICATIONS High current switching applications Ў¤ Power amplifier applications Ў¤ PINNING PIN 1 2 3 Base Collector;connected to

5.1. 2sd842.pdf Size:103K _toshiba

2SD844O
2SD844O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sd843.pdf Size:130K _toshiba

2SD844O
2SD844O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.3. 2sd845.pdf Size:242K _toshiba

2SD844O
2SD844O

5.4. 2sd847.pdf Size:141K _fuji

2SD844O
2SD844O

FUJI POWER TRANSISTOR 2SD847 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH SPEED SWITCHING Outline Drawings TO-3P Features Excellent linearity hFE High collector current Excellent safe operating area High reliability Applications Audio amp JEDEC - Series regulators EIAJ SC-65 General purpose power amplifiers (Complementary to 2SB757) Maximum ratings and characteristics

5.5. 2sd847.pdf Size:54K _inchange_semiconductor

2SD844O
2SD844O

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD847 DESCRIPTION ·Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757 APPLICATIONS ·Audio amplifier applications ·Series regulators applications ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCB

5.6. 2sd849.pdf Size:115K _inchange_semiconductor

2SD844O
2SD844O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD849 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO

5.7. 2sd843.pdf Size:242K _inchange_semiconductor

2SD844O
2SD844O

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD843 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·High Collector Power Dissipation ·Complement to Type 2SB753 APPLICATIONS ·High current switching applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?)

5.8. 2sd841.pdf Size:117K _inchange_semiconductor

2SD844O
2SD844O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD841 DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ High speed switching Ў¤ High voltage:VCBO=800V(Min) APPLICATIONS Ў¤ High voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO I

5.9. 2sd845.pdf Size:135K _inchange_semiconductor

2SD844O
2SD844O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD845 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SB755 Ў¤ High transition frequency Ў¤ High breakdown voltage :VCEO=150V(min) APPLICATIONS Ў¤ For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200

Otros transistores... 2SD84 , 2SD840 , 2SD841 , 2SD842 , 2SD843 , 2SD843O , 2SD843Y , 2SD844 , BD135 , 2SD844Y , 2SD845 , 2SD846 , 2SD847 , 2SD848 , 2SD848A , 2SD849 , 2SD850 .

 


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