Справочник транзисторов. 2SD844O

 

Биполярный транзистор 2SD844O - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD844O
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 15 MHz
   Ёмкость коллекторного перехода (Cc): 250 pf
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO218

 Аналоги (замена) для 2SD844O

 

 

2SD844O Datasheet (PDF)

 ..1. Size:196K  cn sptech
2sd844o 2sd844y.pdf

2SD844O
2SD844O

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754APPLICATIONSHigh current switching applicationsPower amplifier a

 8.1. Size:219K  inchange semiconductor
2sd844.pdf

2SD844O
2SD844O

isc Silicon NPN Power Transistor 2SD844DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 4ACE(sat) CHigh Collector Power Dissipation: P = 60W @T =25C CComplement to Type 2SB754Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHi

 9.1. Size:242K  toshiba
2sd845.pdf

2SD844O
2SD844O

 9.2. Size:103K  toshiba
2sd842.pdf

2SD844O
2SD844O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:130K  toshiba
2sd843.pdf

2SD844O
2SD844O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.4. Size:141K  fuji
2sd847.pdf

2SD844O
2SD844O

FUJI POWER TRANSISTOR2SD847TRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTONHIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesExcellent linearity hFEHigh collector currentExcellent safe operating areaHigh reliabilityApplicationsAudio ampJEDEC -Series regulators EIAJ SC-65General purpose power amplifiers(Complementary to 2SB757)Maximum ratings and characterist

 9.5. Size:217K  inchange semiconductor
2sd845.pdf

2SD844O
2SD844O

isc Silicon NPN Power Transistor 2SD845DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB755Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

 9.6. Size:213K  inchange semiconductor
2sd847.pdf

2SD844O
2SD844O

isc Silicon NPN Power Transistor 2SD847DESCRIPTIONGood Linearity of hFEHigh Collector CurrentWide Area of Safe OperationHigh ReliabilityComplement to Type 2SB757Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulators applicationsGeneral purpose power amplifiersABSOLUT

 9.7. Size:208K  inchange semiconductor
2sd841.pdf

2SD844O
2SD844O

isc Silicon NPN Power Transistor 2SD841DESCRIPTIONHigh Collector-Base Breakdown Voltage: V = 800V(Min.)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T

 9.8. Size:214K  inchange semiconductor
2sd843.pdf

2SD844O
2SD844O

isc Silicon NPN Power Transistor 2SD843DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@I = 4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB753Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier application

 9.9. Size:203K  inchange semiconductor
2sd849.pdf

2SD844O
2SD844O

isc Silicon NPN Power Transistor 2SD849DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

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